Ultra-Wideband Highly Linear 30-165 GHz SPDT Switch Using Drain Integrated Stacked-FETs Structure

Abstract

This study presents a compact, ultra-wideband, highly linear SPDT switch up to the D-band applications. Generally, in the millimeter-wave (mmW) band, stacked-FETs are used to improve insertion loss and power capability. However, the conventional structure of stacked-FETs inevitably includes parasitic line effect between the stacked-FETs. To reduce this effect, an optimized structure for the multi stackedFETs was proposed. The SPDT switch with proposed FETs structure was manufactured using the 0.1-μm GaAs pHEMT process. A bandwidth (BW) of the SPDT switch is 30-165 GHz, and fractional BW is approximately 138%. Insertion loss and isolation are 3.5-6.5 dB and 25-35 dB, over the entire mmW band, respectively. The 1-dB compression points (P1dB) is over 17 dBm at 94 GHz. The size of manufactured SPDT switch is 2.25 × 0.35 mm2 © 2024 IEEE.