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A 5.9/26.5-GHz Dual-Band Concurrent Low Noise Amplfier for 5G NR C-V2X
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kim, Sunghyuk | - |
| dc.contributor.author | Lee, Songjune | - |
| dc.contributor.author | Kim, Dabin | - |
| dc.contributor.author | Kim, Min-Su | - |
| dc.contributor.author | Kim, Junghyun | - |
| dc.date.accessioned | 2025-06-12T06:33:21Z | - |
| dc.date.available | 2025-06-12T06:33:21Z | - |
| dc.date.issued | 2025-02 | - |
| dc.identifier.issn | 2690-3938 | - |
| dc.identifier.issn | 2690-3946 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/125542 | - |
| dc.description.abstract | This paper presents a 5.9/26.5-GHz dual-band concurrent low noise amplifier (LNA) for 5G NR C-V2X. The proposed dual-band LNA is used cascode structure to implement similar gains in two distant frequency bands in a compact area and simple architecture. The dual-band matching circuit, which implements both input and output for a compact area, consists of an LC parallel circuit and a CLC pi network circuit. The measured S11, S22, S21, and NF were, -17.7, -9.2, 16.5, and 1.69 dB at 5.9 GHz, and -14, -12, 17.4, and 2.98 dB at 26.5 GHz, with 18mW under 2 V supply voltage, designed by using the 0.15-μm GaAs p-HEMT process © 2024 IEEE. | - |
| dc.format.extent | 3 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
| dc.title | A 5.9/26.5-GHz Dual-Band Concurrent Low Noise Amplfier for 5G NR C-V2X | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/APMC60911.2024.10867693 | - |
| dc.identifier.scopusid | 2-s2.0-85219587434 | - |
| dc.identifier.wosid | 001436632000382 | - |
| dc.identifier.bibliographicCitation | Asia-Pacific Microwave Conference Proceedings, APMC, pp 1156 - 1158 | - |
| dc.citation.title | Asia-Pacific Microwave Conference Proceedings, APMC | - |
| dc.citation.startPage | 1156 | - |
| dc.citation.endPage | 1158 | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Engineering | - |
| dc.relation.journalResearchArea | Telecommunications | - |
| dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
| dc.relation.journalWebOfScienceCategory | Telecommunications | - |
| dc.subject.keywordAuthor | 5G | - |
| dc.subject.keywordAuthor | 5G NR C-V2X | - |
| dc.subject.keywordAuthor | concurrent | - |
| dc.subject.keywordAuthor | dual-band | - |
| dc.subject.keywordAuthor | GaAs p-HEMT process | - |
| dc.subject.keywordAuthor | LNA | - |
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Related Researcher
- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)