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A 5.9/26.5-GHz Dual-Band Concurrent Low Noise Amplfier for 5G NR C-V2X
- Authors
- Kim, Sunghyuk; Lee, Songjune; Kim, Dabin; Kim, Min-Su; Kim, Junghyun
- Issue Date
- Feb-2025
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Keywords
- 5G; 5G NR C-V2X; concurrent; dual-band; GaAs p-HEMT process; LNA
- Citation
- Asia-Pacific Microwave Conference Proceedings, APMC, pp 1156 - 1158
- Pages
- 3
- Indexed
- SCOPUS
- Journal Title
- Asia-Pacific Microwave Conference Proceedings, APMC
- Start Page
- 1156
- End Page
- 1158
- ISSN
- 2690-3938
2690-3946
- Abstract
- This paper presents a 5.9/26.5-GHz dual-band concurrent low noise amplifier (LNA) for 5G NR C-V2X. The proposed dual-band LNA is used cascode structure to implement similar gains in two distant frequency bands in a compact area and simple architecture. The dual-band matching circuit, which implements both input and output for a compact area, consists of an LC parallel circuit and a CLC pi network circuit. The measured S11, S22, S21, and NF were, -17.7, -9.2, 16.5, and 1.69 dB at 5.9 GHz, and -14, -12, 17.4, and 2.98 dB at 26.5 GHz, with 18mW under 2 V supply voltage, designed by using the 0.15-μm GaAs p-HEMT process © 2024 IEEE.
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Related Researcher
- KIM, JUNG HYUN
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)