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Electrical properties of H2O2 surface treated unintentionally doped GaN films on Si(111) grown by plasma assisted molecular beam epitaxy
- Authors
- 오재응
- Issue Date
- 15-Dec-2015
- Publisher
- The Korean Federation of Science and Technology Societies
- Citation
- The 9th International Conference on Advanced Materials and Devices
- Conference Name
- The 9th International Conference on Advanced Materials and Devices
- Place
- Ramada Plaza Zeju Hotel, Korea
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