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Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD Systemopen access
- Authors
- Lee, Woojin; Fukazawa, Atsuki; Choa, Yong-Ho
- Issue Date
- Sep-2016
- Publisher
- 한국재료학회
- Keywords
- gap fill; f-cvd; low-k; trench pattern; microelectronic
- Citation
- Korean Journal of Materials Research, v.26, no.9, pp.455 - 459
- Indexed
- SCOPUS
KCI
- Journal Title
- Korean Journal of Materials Research
- Volume
- 26
- Number
- 9
- Start Page
- 455
- End Page
- 459
- ISSN
- 1225-0562
- Abstract
- The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)(2)Si(OCH3)(2), and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of sub-micrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.
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Related Researcher
- CHOA, YONG HO
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)