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Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Dong-Pyo | - |
| dc.contributor.author | Shim, Jong-In | - |
| dc.contributor.author | Shin, Dong-Soo | - |
| dc.contributor.author | Kim, Kyu-Sang | - |
| dc.date.accessioned | 2021-06-22T16:23:53Z | - |
| dc.date.available | 2021-06-22T16:23:53Z | - |
| dc.date.issued | 2016-08 | - |
| dc.identifier.issn | 1882-0778 | - |
| dc.identifier.issn | 1882-0786 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13137 | - |
| dc.description.abstract | Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics | - |
| dc.format.extent | 5 | - |
| dc.language | 영어 | - |
| dc.language.iso | ENG | - |
| dc.publisher | Japan Soc of Applied Physics | - |
| dc.title | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | - |
| dc.type | Article | - |
| dc.publisher.location | 영국 | - |
| dc.identifier.doi | 10.7567/APEX.9.081002 | - |
| dc.identifier.scopusid | 2-s2.0-84981347713 | - |
| dc.identifier.wosid | 000383983200002 | - |
| dc.identifier.bibliographicCitation | Applied Physics Express, v.9, no.8, pp 1 - 5 | - |
| dc.citation.title | Applied Physics Express | - |
| dc.citation.volume | 9 | - |
| dc.citation.number | 8 | - |
| dc.citation.startPage | 1 | - |
| dc.citation.endPage | 5 | - |
| dc.type.docType | Article | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | sci | - |
| dc.description.journalRegisteredClass | scie | - |
| dc.description.journalRegisteredClass | scopus | - |
| dc.relation.journalResearchArea | Physics | - |
| dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
| dc.subject.keywordPlus | EFFICIENCY DROOP | - |
| dc.identifier.url | https://iopscience.iop.org/article/10.7567/APEX.9.081002 | - |
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)