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Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
- Issue Date
- Aug-2016
- Publisher
- Japan Soc of Applied Physics
- Citation
- Applied Physics Express, v.9, no.8, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Express
- Volume
- 9
- Number
- 8
- Start Page
- 1
- End Page
- 5
- ISSN
- 1882-0778
1882-0786
- Abstract
- Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)