플라즈마 처리가 HAZO-채널 박막 트랜지스터에 미치는 영향

Abstract

Hafnium-aluminum-zinc-oxide (HAZO) thin films were deposited via co-sputtering and thin film transistors (TFTs) using the HAZO film as the channel layer were fabricated. Plasma treatment using hydrogen (H 2 ) and argon (Ar) was performed on the channel layer and the source/drain electrode regions. Four point probe, X-ray diffraction, and atomic force microscopy were used to analyze the sheet resistance, surface roughness, and structure of the deposited HAZO films. Electrical characteristics of HAZO TFTs were investigated and the experimental results confirmed that H 2 and Ar plasma treatment enhanced the electrical performances of the HAZO-TFTs.