Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
플라즈마 처리가 HAZO-채널 박막 트랜지스터에 미치는 영향Effect of plasma treatment on the characteristics of HAZO-channel thin film transistors
- Other Titles
- Effect of plasma treatment on the characteristics of HAZO-channel thin film transistors
- Issue Date
- Jul-2016
- Publisher
- 대한전기학회
- Citation
- 2016년도 대한전기학회 하계학술대회논문집, pp 1155 - 1156
- Pages
- 2
- Indexed
- OTHER
- Journal Title
- 2016년도 대한전기학회 하계학술대회논문집
- Start Page
- 1155
- End Page
- 1156
- Abstract
- Hafnium-aluminum-zinc-oxide (HAZO) thin films were deposited via co-sputtering and thin film transistors (TFTs) using the HAZO film as the channel layer were fabricated. Plasma treatment using hydrogen (H 2 ) and argon (Ar) was performed on the channel layer and the source/drain electrode regions. Four point probe, X-ray diffraction, and atomic force microscopy were used to analyze the sheet resistance, surface roughness, and structure of the deposited HAZO films. Electrical characteristics of HAZO TFTs were investigated and the experimental results confirmed that H 2 and Ar plasma treatment enhanced the electrical performances of the HAZO-TFTs.
- Files in This Item
- Go to Link
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- PARK, JIN SEOK
- ERICA 공학대학 (SCHOOL OF ELECTRICAL ENGINEERING)