Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity
- Authors
- Song, Eun-Jin; Jo, Hyunjin; Kwon, Se-Hun; Ahn, Ji-Hoon; Kwon, Jung-Dae
- Issue Date
- Jan-2020
- Publisher
- Elsevier Sequoia
- Keywords
- Plasma-enhanced atomic layer deposition; Titanium oxynitride; Super-cycle; Passivation layer; Electrical conductivity; Carrier lifetime
- Citation
- Thin Solid Films, v.694, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 694
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1330
- DOI
- 10.1016/j.tsf.2019.137752
- ISSN
- 0040-6090
- Abstract
- For achieving improved electrical conductivity through surface passivation of crystalline silicon, we investigated TiON films by combining TiO2 and TiN deposition cycles in plasma-enhanced atomic layer deposition. To control the composition of the TiON films, a super-cycle-composed of one cycle of TiO2 and x-cycles of TiN-was adopted. The thickness of the films could be precisely controlled on the nanometer and sub-nanometer scale, regardless of the TiO2:TiN sub-cycle ratio. The chemical state, crystalline phase, and interface characteristics of the TiON films were examined. For the TiO2:TiN = 1:20 film, the carrier lifetime was increased from 30 to 243 mu s, while the resistivity decreased from 3.1 x 10(8) to 7.1 x 10(-1) Omega.cm compared to the TiO2 film.
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