Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Cho, Byoung-Jun | - |
dc.contributor.author | Kim, Jin-Yong | - |
dc.contributor.author | Hamada, Satomi | - |
dc.contributor.author | Shima, Shohei | - |
dc.contributor.author | Park, Jin-Goo | - |
dc.date.accessioned | 2021-06-22T16:42:50Z | - |
dc.date.available | 2021-06-22T16:42:50Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13609 | - |
dc.description.abstract | Benzotriazole (BTA) has been used to protect copper (Cu) from corrosion during Cu chemical mechanical planarization (CMP) processes. However, an undesirable Cu-BTA complex is deposited after Cu CMP processes and it should be completely removed at post-Cu CMP cleaning for next fabrication process. Therefore, it is very important to understand of Cu-BTA complex formation behavior for its applications such as Cu CMP and post-Cu CMP cleaning. The present study investigated the effect of pH and polisher conditions on the formation of Cu-BTA complex layers using electrochemical techniques (potentiodynamic polarization and electrochemical impedance spectroscopy) and the surface contact angle. The wettability was not a significant factor for the polishing interface, as no difference in the contact angles was observed for these processes. Both electrochemical techniques revealed that BTA had a unique advantage of long-term protection for Cu corrosion in an acidic condition (pH 3). (C) 2016 The Japan Society of Applied Physics | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP Publishing Ltd | - |
dc.title | Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Goo | - |
dc.identifier.doi | 10.7567/JJAP.55.06JB01 | - |
dc.identifier.scopusid | 2-s2.0-85055569060 | - |
dc.identifier.wosid | 000377485800003 | - |
dc.identifier.bibliographicCitation | Japanese Journal of Applied Physics, v.55, no.63, pp.1 - 5 | - |
dc.relation.isPartOf | Japanese Journal of Applied Physics | - |
dc.citation.title | Japanese Journal of Applied Physics | - |
dc.citation.volume | 55 | - |
dc.citation.number | 63 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 5 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | CORROSION INHIBITION | - |
dc.subject.keywordPlus | CU | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | CMP | - |
dc.subject.keywordPlus | IMPEDANCE | - |
dc.subject.keywordPlus | ALLOY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | SLURRY | - |
dc.subject.keywordPlus | TMAH | - |
dc.subject.keywordPlus | ACID | - |
dc.identifier.url | https://iopscience.iop.org/article/10.7567/JJAP.55.06JB01 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
55 Hanyangdeahak-ro, Sangnok-gu, Ansan, Gyeonggi-do, 15588, Korea+82-31-400-4269 sweetbrain@hanyang.ac.kr
COPYRIGHT © 2021 HANYANG UNIVERSITY. ALL RIGHTS RESERVED.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.