Effect of pH and chemical mechanical planarization process conditions on the copper-benzotriazole complex formation
- Authors
- Cho, Byoung-Jun; Kim, Jin-Yong; Hamada, Satomi; Shima, Shohei; Park, Jin-Goo
- Issue Date
- Jun-2016
- Publisher
- IOP Publishing Ltd
- Citation
- Japanese Journal of Applied Physics, v.55, no.63, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- Japanese Journal of Applied Physics
- Volume
- 55
- Number
- 63
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13609
- DOI
- 10.7567/JJAP.55.06JB01
- ISSN
- 0021-4922
- Abstract
- Benzotriazole (BTA) has been used to protect copper (Cu) from corrosion during Cu chemical mechanical planarization (CMP) processes. However, an undesirable Cu-BTA complex is deposited after Cu CMP processes and it should be completely removed at post-Cu CMP cleaning for next fabrication process. Therefore, it is very important to understand of Cu-BTA complex formation behavior for its applications such as Cu CMP and post-Cu CMP cleaning. The present study investigated the effect of pH and polisher conditions on the formation of Cu-BTA complex layers using electrochemical techniques (potentiodynamic polarization and electrochemical impedance spectroscopy) and the surface contact angle. The wettability was not a significant factor for the polishing interface, as no difference in the contact angles was observed for these processes. Both electrochemical techniques revealed that BTA had a unique advantage of long-term protection for Cu corrosion in an acidic condition (pH 3). (C) 2016 The Japan Society of Applied Physics
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/13609)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.