A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity
DC Field | Value | Language |
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dc.contributor.author | Bae, Younghwan | - |
dc.contributor.author | Jhon, Heesauk | - |
dc.contributor.author | Kim, Junghyun | - |
dc.date.accessioned | 2021-06-22T09:09:56Z | - |
dc.date.available | 2021-06-22T09:09:56Z | - |
dc.date.issued | 2020-01 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.issn | 2079-9292 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1414 | - |
dc.description.abstract | In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12-15 degrees phase angle step over a mid/high-band range of a 1.5-2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of -78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners. | - |
dc.format.extent | 9 | - |
dc.language | 영어 | - |
dc.language.iso | ENG | - |
dc.publisher | MDPI | - |
dc.title | A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity | - |
dc.type | Article | - |
dc.publisher.location | 스위스 | - |
dc.identifier.doi | 10.3390/electronics9010007 | - |
dc.identifier.scopusid | 2-s2.0-85077084713 | - |
dc.identifier.wosid | 000516827000007 | - |
dc.identifier.bibliographicCitation | ELECTRONICS, v.9, no.1, pp 1 - 9 | - |
dc.citation.title | ELECTRONICS | - |
dc.citation.volume | 9 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 9 | - |
dc.type.docType | Article | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Computer Science | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Computer Science, Information Systems | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | ANTENNA SWITCH | - |
dc.subject.keywordAuthor | CMOS SOI process | - |
dc.subject.keywordAuthor | impedance tuner | - |
dc.subject.keywordAuthor | intermodulation distortion | - |
dc.subject.keywordAuthor | multi-stacked FET switch | - |
dc.subject.keywordAuthor | programmable | - |
dc.identifier.url | https://www.mdpi.com/2079-9292/9/1/7 | - |
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