A Programmable Impedance Tuner with a High Resolution Using a 0.18-um CMOS SOI Process for Improved Linearity
- Authors
- Bae, Younghwan; Jhon, Heesauk; Kim, Junghyun
- Issue Date
- Jan-2020
- Publisher
- MDPI
- Keywords
- CMOS SOI process; impedance tuner; intermodulation distortion; multi-stacked FET switch; programmable
- Citation
- ELECTRONICS, v.9, no.1, pp 1 - 9
- Pages
- 9
- Indexed
- SCIE
SCOPUS
- Journal Title
- ELECTRONICS
- Volume
- 9
- Number
- 1
- Start Page
- 1
- End Page
- 9
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/1414
- DOI
- 10.3390/electronics9010007
- ISSN
- 2079-9292
2079-9292
- Abstract
- In this paper, a novel coupler/reflection-type programmable electronic impedance tuner combined with switches that were fabricated by a 0.18-um complementary metal-oxide-semiconductor (CMOS) silicon-on-insulator (SOI) process is proposed for replacement of the conventional mechanical tuner in power amplifier (PA) load-pull test. By employing the multi-stacked field-effect transistors (FETs) as a single-branch switch, the proposed tuner has the advantage of precise impedance variation with systematic and magnitude and phase adjustment. Additionally, it led to high standing wave ratio (SWR) coverage and a good impedance resolution with a high power handling capability. Furthermore, the double-branch based on multi-stacked FET was applied to switches for additional enhancement of the intermodulation distortion (IMD) performance through the mitigated drain-source voltage of the single-FET. Drawing upon the measurement results, we demonstrated that SWR changed from 2 to 6 sequentially with a 12-15 degrees phase angle step over a mid/high-band range of a 1.5-2.1 GHz band for 3G/4G handset application. In addition, the PA load-pull measurement results obtained using the proposed tuners verified their practicality and competitive performance with mechanical tuners. Finally, the measured linearity using the double-branch switch demonstrated the good IMD3 performance of -78 dBc, and this result is noteworthy when compared with conventional electronic impedance tuners.
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