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Photoelectrochemical oxygen evolution improved by a thin Al2O3 interlayer in a NiOx/n-Si photoanode
- Authors
- Park, Min-Joon; Jung, Jin-Young; Shin, Sun-Mi; Song, Jae-Won; Nam, Yoon-Ho; Kim, Dong-Hyung; Lee, Jung-Ho
- Issue Date
- Jan-2016
- Publisher
- Elsevier Sequoia
- Keywords
- Silicon; Photoanode; Aluminum trioxide; Interlayer; Nickel oxide; Catalyst; Oxygen evolution reaction; Photoelectrochemical cell
- Citation
- Thin Solid Films, v.599, pp.54 - 58
- Indexed
- SCIE
SCOPUS
- Journal Title
- Thin Solid Films
- Volume
- 599
- Start Page
- 54
- End Page
- 58
- ISSN
- 0040-6090
- Abstract
- We employ a thin Al2O3 interlayer between p-NiOX catalyst/n-Si photoanode interfaces to realize an effective oxygen evolution reaction (OER). The Al2O3 interlayer is used to reduce the interface defect density, enhance the band bending by suppressing the Fermi-level pinning effect, and enhance photovoltage at the catalyst/ semiconductor rectifying junction. Our NiOX/Al2O3/n-Si photoanodes generated a photocurrent of 3.36 mA/cm(2) at the equilibrium potential of OER (E-OER = 1.23 V vs. reversible hydrogen electrode in 1 M NaOH solution) and a solar-to-oxygen conversion efficiency of 0.321%. Moreover, the photoanode showed no sign of decay over 20 h of photoelectrochemical water oxidation. (C) 2015 Elsevier B.V. All rights reserved.
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Related Researcher
- Lee, Jung-Ho
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)