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Enhancement of internal quantum efficiency in InGaN-based light-emitting diodes by additional growth of the p-ZnO layer
- Authors
- 신동수
- Issue Date
- 12-Feb-2015
- Place
- The Moscone Center, San Francisco, California, USA
- Conference Name
- SPIE Photonics West 2015
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Related Researcher
- Shin, Dong Soo
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)