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Interface sulfur passivation using H2S pre-deposition annealing for atomic-layer-deposited HfO2 film on Ge substrate
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 박태주 | - |
| dc.date.accessioned | 2021-06-22T17:47:11Z | - |
| dc.date.available | 2021-06-22T17:47:11Z | - |
| dc.date.issued | 2015-02-11 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15228 | - |
| dc.title | Interface sulfur passivation using H2S pre-deposition annealing for atomic-layer-deposited HfO2 film on Ge substrate | - |
| dc.type | Conference | - |
| dc.citation.conferenceName | 한국반도체학술대회 | - |
| dc.citation.conferencePlace | 인천/ 송도컨벤시아 | - |
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)