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Interface sulfur passivation using H2S pre-deposition annealing for atomic-layer-deposited HfO2 film on Ge substrate
- Authors
- 박태주
- Issue Date
- 11-Feb-2015
- Place
- 인천/ 송도컨벤시아
- Conference Name
- 한국반도체학술대회
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Related Researcher
- Park, Tae Joo
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)