Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
DC Field | Value | Language |
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dc.contributor.author | Jung, Hanearl | - |
dc.contributor.author | Kim, Woo-Hee | - |
dc.contributor.author | Oh, Il Kwon | - |
dc.contributor.author | Lee, Chang Wan | - |
dc.contributor.author | Lansalot-Matras, Clement | - |
dc.contributor.author | Lee, Su Jeong | - |
dc.contributor.author | Myoung, Jae Min | - |
dc.contributor.author | Lee, Han Bo Ram | - |
dc.contributor.author | Kim, Hyungjun | - |
dc.date.accessioned | 2021-06-22T18:04:29Z | - |
dc.date.available | 2021-06-22T18:04:29Z | - |
dc.date.created | 2021-01-22 | - |
dc.date.issued | 2016-06 | - |
dc.identifier.issn | 0022-2461 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15611 | - |
dc.description.abstract | The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface. © 2016, Springer Science+Business Media New York. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Kluwer Academic Publishers | - |
dc.title | Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Woo-Hee | - |
dc.identifier.doi | 10.1007/s10853-016-9811-0 | - |
dc.identifier.scopusid | 2-s2.0-84961214387 | - |
dc.identifier.wosid | 000372573400006 | - |
dc.identifier.bibliographicCitation | Journal of Materials Science, v.51, no.11, pp.5082 - 5091 | - |
dc.relation.isPartOf | Journal of Materials Science | - |
dc.citation.title | Journal of Materials Science | - |
dc.citation.volume | 51 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 5082 | - |
dc.citation.endPage | 5091 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordPlus | Dielectric properties of solids | - |
dc.subject.keywordPlus | Film preparation | - |
dc.subject.keywordPlus | Leakage currents | - |
dc.subject.keywordPlus | Low-k dielectric | - |
dc.subject.keywordPlus | Metals | - |
dc.subject.keywordPlus | Oxide films | - |
dc.subject.keywordPlus | Plasma CVD | - |
dc.subject.keywordPlus | Semiconducting organic compounds | - |
dc.subject.keywordPlus | Silica | - |
dc.subject.keywordPlus | Silicon oxides | - |
dc.subject.keywordPlus | Surface reactions | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | Chemical compositions | - |
dc.subject.keywordPlus | Deposition conditions | - |
dc.subject.keywordPlus | Electrical characterization | - |
dc.subject.keywordPlus | Growth characteristic | - |
dc.subject.keywordPlus | Interface generation | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapor depositions (PE CVD) | - |
dc.subject.keywordPlus | Plasma-enhanced atomic layer deposition | - |
dc.subject.keywordPlus | Saturated surfaces | - |
dc.subject.keywordPlus | Plasma enhanced chemical vapor deposition | - |
dc.identifier.url | https://link.springer.com/article/10.1007%2Fs10853-016-9811-0 | - |
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