Growth characteristics and electrical properties of SiO2 thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor
- Authors
- Jung, Hanearl; Kim, Woo-Hee; Oh, Il Kwon; Lee, Chang Wan; Lansalot-Matras, Clement; Lee, Su Jeong; Myoung, Jae Min; Lee, Han Bo Ram; Kim, Hyungjun
- Issue Date
- Jun-2016
- Publisher
- Kluwer Academic Publishers
- Citation
- Journal of Materials Science, v.51, no.11, pp.5082 - 5091
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Materials Science
- Volume
- 51
- Number
- 11
- Start Page
- 5082
- End Page
- 5091
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15611
- DOI
- 10.1007/s10853-016-9811-0
- ISSN
- 0022-2461
- Abstract
- The deposition of high-quality SiO2 films has been achieved through the use of both plasma-enhanced chemical vapor deposition (PE-CVD) and plasma-enhanced atomic layer deposition (PE-ALD) methods using H2Si[N(C2H5)2]2 as a Si precursor. We systematically investigated growth characteristics, chemical compositions, and electrical properties of PE-CVD SiO2 prepared under various deposition conditions. The SiO2 films prepared using PE-CVD showed high purity and good stoichiometry with a dielectric constant of ~4. In addition, the PE-ALD process of the SiO2 films exhibited well-saturated and almost linear growth characteristics of ~1.3 Å cycle−1 without notable incubation cycles, producing pure SiO2 films. Electrical characterization of metal-oxide silicon capacitor structures prepared with each SiO2 film showed that PE-ALD SiO2 films had relatively lower leakage currents than PE-CVD SiO2 films. This might be a result of the saturated surface reaction mechanism of PE-ALD, which allows a smooth surface in comparison with PE-CVD method. In addition, the dielectric properties of both SiO2 films were further evaluated in the structures of In–Ga–Zn–O thin-film transistors, and they both showed good device performances in terms of high Ion − Ioff ratios (>108) and low off-currents (<10−11 A). However, based on the negative bias stress reliability test, it was found that PE-ALD SiO2 showed better reliability against a negative Vth shift than PE-CVD SiO2, which might also be understood from its smoother channel/insulator interface generation at the interface. © 2016, Springer Science+Business Media New York.
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