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Low-frequency noise characteristics of InGaN-based light-emitting diodes

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dc.contributor.authorOh, Chan-Hyoung-
dc.contributor.authorHan, Dong-Pyo-
dc.contributor.authorShin, Dong Soo-
dc.contributor.authorShim, Jong In-
dc.date.accessioned2021-06-22T18:22:00Z-
dc.date.available2021-06-22T18:22:00Z-
dc.date.created2021-01-22-
dc.date.issued2016-01-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/15982-
dc.description.abstractWe investigate the low-frequency noise characteristics of InGaN-based light-emitting diodes with different forward leakage currents. It is found that the low-frequency noise characteristics are closely correlated with the forward leakage current. © 2015 IEEE.-
dc.language영어-
dc.language.isoen-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleLow-frequency noise characteristics of InGaN-based light-emitting diodes-
dc.typeArticle-
dc.contributor.affiliatedAuthorShin, Dong Soo-
dc.contributor.affiliatedAuthorShim, Jong In-
dc.identifier.doi10.1109/CLEOPR.2015.7376075-
dc.identifier.scopusid2-s2.0-84964016564-
dc.identifier.bibliographicCitation2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp.1 - 2-
dc.relation.isPartOf2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.citation.title2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015-
dc.citation.volume2-
dc.citation.startPage1-
dc.citation.endPage2-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusIII-V semiconductors-
dc.subject.keywordPlusLeakage currents-
dc.subject.keywordPlusLight emitting diodes-
dc.subject.keywordPlusSpurious signal noise-
dc.subject.keywordPlusLow-frequency noise characteristics-
dc.subject.keywordPlusLight-
dc.identifier.urlhttps://ieeexplore.ieee.org/document/7376075-
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