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Low-frequency noise characteristics of InGaN-based light-emitting diodes
- Issue Date
- Jan-2016
- Publisher
- Institute of Electrical and Electronics Engineers Inc.
- Citation
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015, v.2, pp.1 - 2
- Indexed
- SCOPUS
- Journal Title
- 2015 11th Conference on Lasers and Electro-Optics Pacific Rim, CLEO-PR 2015
- Volume
- 2
- Start Page
- 1
- End Page
- 2
- Abstract
- We investigate the low-frequency noise characteristics of InGaN-based light-emitting diodes with different forward leakage currents. It is found that the low-frequency noise characteristics are closely correlated with the forward leakage current. © 2015 IEEE.
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Related Researcher
- Shim, Jong In
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)