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Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD
- Issue Date
- May-2016
- Publisher
- Electrochemical Society, Inc.
- Keywords
- Insulated layer; Low-k; Trench filling; Vacuum uv light-CVD
- Citation
- ECS Journal of Solid State Science and Technology, v.5, no.6, pp N32 - N34
- Indexed
- SCIE
SCOPUS
- Journal Title
- ECS Journal of Solid State Science and Technology
- Volume
- 5
- Number
- 6
- Start Page
- N32
- End Page
- N34
- ISSN
- 2162-8769
2162-8777
- Abstract
- Photo-induced deposition of SiOCH thin films and their trench filling properties are discussed. Octamethyl-cycloterasiloxan (OMCTS) was used as a precursor and Xe-2 excimer lamp was used as a light source. The deposition temperature was 80 degrees C and the reactor pressure was maintained at 38.5 Pa. The relative permittivity of as-deposited film was 7.9. Due to the UV cure process, those OH-related bonds in the film were significantly decreased. The k-value of the UV cure film was 2.1. Photo-induced SiOCH was employed to achieve bottom-up filling of high-aspect-ratio features (A/S > 7.5). (C) 2016 The Electrochemical Society. All rights reserved.
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Related Researcher
- CHOA, YONG HO
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)