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Effect of Al2O3/ZnO Nanolaminate by Atomic Layer Deposition (ALD) on p-Si Photocathode for Photoelectrochemical Hydrogen Evolution
- Authors
- Kim, Jae-Yoo; Park, Min-Joon; Lee, Jung-Ho
- Issue Date
- Nov-2015
- Publisher
- American Scientific Publishers
- Keywords
- Photoelectrochemical; Nanolaminate; Atomic Layer Deposition
- Citation
- Science of Advanced Materials, v.7, no.11, pp.2492 - 2495
- Indexed
- SCIE
SCOPUS
- Journal Title
- Science of Advanced Materials
- Volume
- 7
- Number
- 11
- Start Page
- 2492
- End Page
- 2495
- ISSN
- 1947-2935
- Abstract
- Al2O3/ZnO (AZO) nanolaminate layer was deposited by atomic layer deposition (ALD) on p-type Si planar photocathode for photoelectrochemical hydrogen evolution reaction. ALD is the excellent method to deposit nanofilms with uniform morphology. AZO nanolaminate layer was expected to protect the p-Si photocathode from oxidation in an ambient condition, and to offer the surface passivation to prevent surface recombination. The % of Al2O3 in AZO was controlled in AZO layer, 100, 80, 50, 20%, and 100% ZnO, on the p-Si photocathode. The total thickness of AZO was fixed at similar to 2 nm by the number of ALD cycles. From the current density versus potential (J-V) curve, 100% Al2O3 showed the lowest overpotential.
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Related Researcher
- Lee, Jung-Ho
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)