V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sheen, Mi-Hyang | - |
dc.contributor.author | Kim, Sung-Dae | - |
dc.contributor.author | Lee, Jong-Hwan | - |
dc.contributor.author | Shim, Jong-In | - |
dc.contributor.author | Kim, Young-Woon | - |
dc.date.accessioned | 2021-06-22T18:44:26Z | - |
dc.date.available | 2021-06-22T18:44:26Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.issn | 0361-5235 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16586 | - |
dc.description.abstract | The luminescence characteristics of V-pits in InGaN/GaN quantum wells (QW) correlated directly with the microstructure of the V-pits, as studied by use of transmission electron microscopy with cathodoluminescence. {10-11}-Faceted V-pits, formed in the QW, produce more intense blue-shifted emission than {0001}-plane QW. A dead emission center seems to be present at the corner of the V-pit which connects the R-plane and C-plane QW. High-resolution transmission electron microscopy revealed formation of indium-deficient QW at the corners of the V-pits. High potential barriers occur because of the lack of indium around the hexagonal V-pit; this effectively blocks diffusion of carriers into the threading dislocations known to be non-radiative recombination centers. V-pits thus have promise for improving the internal quantum efficiency of light-emitting diodes. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Shim, Jong-In | - |
dc.identifier.doi | 10.1007/s11664-015-3994-z | - |
dc.identifier.scopusid | 2-s2.0-84942834489 | - |
dc.identifier.wosid | 000361903000007 | - |
dc.identifier.bibliographicCitation | Journal of Electronic Materials, v.44, no.11, pp.4134 - 4138 | - |
dc.relation.isPartOf | Journal of Electronic Materials | - |
dc.citation.title | Journal of Electronic Materials | - |
dc.citation.volume | 44 | - |
dc.citation.number | 11 | - |
dc.citation.startPage | 4134 | - |
dc.citation.endPage | 4138 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | DEFECTS | - |
dc.subject.keywordPlus | ORIGIN | - |
dc.subject.keywordAuthor | GaN | - |
dc.subject.keywordAuthor | V-pit | - |
dc.subject.keywordAuthor | dislocation | - |
dc.subject.keywordAuthor | cathodoluminescence | - |
dc.subject.keywordAuthor | transmission electron microscopy | - |
dc.identifier.url | https://link.springer.com/article/10.1007/s11664-015-3994-z | - |
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