V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells
- Authors
- Sheen, Mi-Hyang; Kim, Sung-Dae; Lee, Jong-Hwan; Shim, Jong-In; Kim, Young-Woon
- Issue Date
- Nov-2015
- Publisher
- Institute of Electrical and Electronics Engineers
- Keywords
- GaN; V-pit; dislocation; cathodoluminescence; transmission electron microscopy
- Citation
- Journal of Electronic Materials, v.44, no.11, pp.4134 - 4138
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of Electronic Materials
- Volume
- 44
- Number
- 11
- Start Page
- 4134
- End Page
- 4138
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16586
- DOI
- 10.1007/s11664-015-3994-z
- ISSN
- 0361-5235
- Abstract
- The luminescence characteristics of V-pits in InGaN/GaN quantum wells (QW) correlated directly with the microstructure of the V-pits, as studied by use of transmission electron microscopy with cathodoluminescence. {10-11}-Faceted V-pits, formed in the QW, produce more intense blue-shifted emission than {0001}-plane QW. A dead emission center seems to be present at the corner of the V-pit which connects the R-plane and C-plane QW. High-resolution transmission electron microscopy revealed formation of indium-deficient QW at the corners of the V-pits. High potential barriers occur because of the lack of indium around the hexagonal V-pit; this effectively blocks diffusion of carriers into the threading dislocations known to be non-radiative recombination centers. V-pits thus have promise for improving the internal quantum efficiency of light-emitting diodes.
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