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Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes
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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 심종인 | - |
| dc.contributor.author | 신동수 | - |
| dc.date.accessioned | 2021-06-22T19:01:43Z | - |
| dc.date.available | 2021-06-22T19:01:43Z | - |
| dc.date.created | 2021-02-18 | - |
| dc.date.issued | 2015-10 | - |
| dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16921 | - |
| dc.description.abstract | To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements. | - |
| dc.language | 영어 | - |
| dc.language.iso | en | - |
| dc.publisher | The Japan Society of Applied Physics | - |
| dc.title | Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes | - |
| dc.type | Article | - |
| dc.contributor.affiliatedAuthor | 신동수 | - |
| dc.identifier.doi | 10.1109/moc.2015.7416402 | - |
| dc.identifier.bibliographicCitation | Technical Digest of The Twentieth Microoptics Conference, pp.70 - 71 | - |
| dc.relation.isPartOf | Technical Digest of The Twentieth Microoptics Conference | - |
| dc.citation.title | Technical Digest of The Twentieth Microoptics Conference | - |
| dc.citation.startPage | 70 | - |
| dc.citation.endPage | 71 | - |
| dc.type.rims | ART | - |
| dc.description.journalClass | 3 | - |
| dc.description.isOpenAccess | N | - |
| dc.description.journalRegisteredClass | other | - |
| dc.identifier.url | https://ieeexplore.ieee.org/document/7416402 | - |
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)