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Techniques for optoelectronic performance evaluation in InGaN-based light-emitting diodes

Authors
심종인신동수
Issue Date
Oct-2015
Publisher
The Japan Society of Applied Physics
Citation
Technical Digest of The Twentieth Microoptics Conference, pp.70 - 71
Indexed
OTHER
Journal Title
Technical Digest of The Twentieth Microoptics Conference
Start Page
70
End Page
71
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/16921
DOI
10.1109/moc.2015.7416402
Abstract
To understand how each experimental parameter influences optoelectronic performances of InGaN-based LEDs, a method of systematic analysis that assesses the interrelations independently and quantitatively is absolutely necessary. Here, we introduce various characterization techniques to clarify the performance of LEDs and hidden severity of the detrimental effects, starting from the simple I-V measurement to more sophisticated temperature-dependent, spectroscopic, and LED efficiency measurements.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF PHOTONICS AND NANOELECTRONICS > 1. Journal Articles

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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)
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