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Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls
- Authors
- Heo, Hoseok; Sung, Ji Ho; Jin, Gangtae; Ahn, Ji-Hoon; Kim, Kyungwook; Lee, Myoung-Jae; Cha, Soonyoung; Choi, Hyunyong; Jo, Moon-Ho
- Issue Date
- Jul-2015
- Publisher
- WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
- Keywords
- 2D materials; heterostructures; hexagonal transition-metal dichalcogenides; monolayer semiconductors; superlattices
- Citation
- Advanced Materials, v.27, no.25, pp 3803 - 3810
- Pages
- 8
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Advanced Materials
- Volume
- 27
- Number
- 25
- Start Page
- 3803
- End Page
- 3810
- ISSN
- 0935-9648
1521-4095
- Abstract
- 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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Related Researcher
- Ahn, Ji Hoon
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)