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High-performance metal-oxide semiconductor based optoelectronics
- Authors
- Kim, Jaehyun; Kwon, Sung Min; Jo, Jeong-Wan; Jo, Chanho; Kim, Jaekyun; Kim, Yong-Hoon; Kim, Myung-Gil; Park, Sung Kyu
- Issue Date
- Sep-2020
- Publisher
- Wiley
- Keywords
- Amorphous metal-oxide semiconductor; Flexible/stretchable electronics; Neuromorphic devices; Optoelectronics; Phototransistors
- Citation
- Digest of Technical Papers - SID International Symposium, v.51, no.1, pp 536 - 539
- Pages
- 4
- Journal Title
- Digest of Technical Papers - SID International Symposium
- Volume
- 51
- Number
- 1
- Start Page
- 536
- End Page
- 539
- ISSN
- 0097-966X
2168-0159
- Abstract
- We investigated high-performance amorphous metal-oxide semiconductor based optoelectronics using low-temperature and solution process technologies. In particular, metal-oxide and quantum dots hybrid phototransistors exhibited ultra-high photodetectivity up to 4x1017 Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal-oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large-scaled ultra-flexible and stretchable device showing promising next-generation wearable optoelectronics. © 2020 SID.
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Related Researcher
- KIM, Jaekyun
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)