A Novel Load Mismatch Detection and Correction Technique for 3G/4G Load Insensitive Power Amplifier Application
- Authors
- Ji, Donghyeon; Jeon, Jooyoung; Kim, Junghyun
- Issue Date
- May-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Antenna mismatch; efficiency enhancement; HBT power amplifier (PA); linearity enhancement; load insensitive mismatch correction; silicon-on-insulator (SOI) field-effect transistor (FET) impedance mismatch detector; tunable output matching network (TOMN)
- Citation
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.63, no.5, pp.1530 - 1543
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
- Volume
- 63
- Number
- 5
- Start Page
- 1530
- End Page
- 1543
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18359
- DOI
- 10.1109/TMTT.2015.2417862
- ISSN
- 0018-9480
- Abstract
- This paper proposes a novel load mismatch detection and correction technique to develop a load insensitive power amplifier (PA). The presented algorithm for the technique can simply be implemented by handling load impedance as a region rather than a point. Based on the detection results, a tunable output matching network (TOMN) corrects a mismatched load and transforms it into a desired region, thereby dramatically enhancing PA performances under load mismatched condition with a minimal compromising at a matched load. The detectors and TOMN were simply implemented using a 0.18-mu m silicon-on-insulator field-effect transistor, which were integrated with a 2-mu m InGaP/GaAs HBT PA monolithic microwave integrated circuit into a single module. A PA module was implemented using more advanced impedance detectors having eight-phase regions, which was measured with WCDMA R'99 and 10-MHz 16QAM long-term evolution signals centered at 1.95 GHz for verification of the proposed idea. When compared to a conventional PA, excellent adjacent channel leakage ratio improvements of 12.7 and 8.3 dB, respectively, were achieved under output voltage standing-wave ratio (VSWR) of 2.5:1 for both applications. Moreover, the idea was extended for efficiency enhancement in a linearity spec-compliant impedance region, and the PA showed power-added efficiency improvements of 1.6% and 0.5%, respectively, under output VSWR of 2.5: 1 for both applications.
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