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Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size

Authors
Kim, Hyuk-MinPark, Gun-HoSeo, Young-GilMoon, Deog-JuCho, Byoung-JunPark, Jin-Goo
Issue Date
May-2015
Publisher
Elsevier BV
Keywords
Lapping; Sapphire; Fixed abrasive pad; Diamond; Metal-resin platen
Citation
Wear, v.332-333, pp 794 - 799
Pages
6
Indexed
SCI
SCIE
SCOPUS
Journal Title
Wear
Volume
332-333
Start Page
794
End Page
799
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18380
DOI
10.1016/j.wear.2015.02.029
ISSN
0043-1648
1873-2577
Abstract
Lapping for sapphire substrates was evaluated with respect to material removal modes. Firstly, a 3-body removal mode that consists of diamond slurry and a metal-resin platen was tested. The metal-resin platen was produced by mixing metal particles (Cu, Al, and Sn) and resin. Secondly, we analyzed a 2-body system using a fixed diamond abrasive pad with a low concentration of alumina slurry as a dressing for the pad surface. For each lapping process, we examined the function of the diamond abrasive particles. The fundamental characteristics of each process were observed to suggest optimal conditions for sapphire processing for various applications. (C) 2015 Elsevier B.V. All rights reserved.
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ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)
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