A 1.2-V 4.2-ppm/degrees C High-Order Curvature-Compensated CMOS Bandgap Reference
- Authors
- Duan, Quanzhen; Roh, Jeongjin
- Issue Date
- Mar-2015
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Bandgap reference; high-order curvature compensation; high-precision; low voltage; temperature coefficient
- Citation
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, v.62, no.3, pp.662 - 670
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
- Volume
- 62
- Number
- 3
- Start Page
- 662
- End Page
- 670
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/18819
- DOI
- 10.1109/TCSI.2014.2374832
- ISSN
- 1549-8328
- Abstract
- This study presents a high-precision CMOS bandgap reference (BGR) circuit with low supply voltage. The proposed BGR circuit consists of two BGR cores and a curvature correction circuit, which includes a current mirror and a summing circuit. Two BGR cores adopt conventional structures with the curvature-down characteristics. A current-mirror circuit is proposed to implement one of the BGR cores to have the curvature-up characteristic. Selection of the appropriate resistances in the BGR cores results in one reference voltage with a well balanced curvature-down characteristic and another reference voltage with an evenly balanced curvature-up characteristic. The summation of these reference voltages is proposed to achieve a high-order curvature compensation. This curvature correction circuit causes the proposed BGR circuit without any trimming to show a measured temperature coefficient (TC) as low as 4.2 ppm/degrees C over a wide temperature range of 160 degrees C (-40 similar to 120 degrees C) at a power supply voltage of 1.2 V. The average TC for 8 random samples is approximately 9.3 ppm/degrees C. The measured power-supply rejection ratio (PSRR) of -30 dB is achieved at the frequency of 100 kHz. The total chip size is 0.063mm(2) with a standard 0.13-mu m CMOS process.
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