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Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation
- Authors
- Yun, Joosun; Shim, Jong-In; Hirayama, Hideki
- Issue Date
- Feb-2015
- Publisher
- Japan Soc of Applied Physics
- Citation
- Applied Physics Express, v.8, no.2, pp 1 - 4
- Pages
- 4
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Applied Physics Express
- Volume
- 8
- Number
- 2
- Start Page
- 1
- End Page
- 4
- ISSN
- 1882-0778
1882-0786
- Abstract
- The efficiency droop in 280-nm AlGaN multiple-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) is analyzed using the carrier rate equation. It is shown that the internal quantum efficiency (eta(IQE)), injection efficiency (eta(inj)), light-extraction efficiency (eta(LEE)), Shockley-Read-Hall recombination coefficient (A), and Auger coefficient (C) can be determined by the carrier rate equation using the theoretical radiative recombination coefficient (B), experimentally measured wavelength spectrum, and external quantum efficiency (eta(EQE)). The results show that the carrier spillover from the MQWs to the p-AlGaN layer is the main cause of the efficiency droop. (C) 2015 The Japan Society of Applied Physics.
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Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)