Effect of FOUP atmosphere control on process wafer integrity in sub20 nm device fabrication
- Authors
- Kim, Bong ho; Park, Jin-Goo
- Issue Date
- 2015
- Publisher
- Scitec Publications Ltd.
- Keywords
- Corrosion; FOUP; N2 Purge; Process queue
- Citation
- Solid State Phenomena, v.219, pp.256 - 259
- Indexed
- SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 219
- Start Page
- 256
- End Page
- 259
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/20561
- DOI
- 10.4028/www.scientific.net/SSP.219.256
- ISSN
- 1012-0394
- Abstract
- Defects could be generated on the wafers by the particle contamination, formation of organic residue, corrosion, native oxide growth on the surface and airborne molecular contaminants (AMC) [1] etc. These problems hinder the device performance and also can decrease the yield and productivity in the semiconductor manufacturing process. It could be resolved by various cleaning methods [2]. However, the results such as corrosion, native oxide growth on wafer and AMC deposition should be handled properly by N2 gas purge prevention method during the process or standby [3,4]. It should be implemented before starting the process, which can maximize the productivity with a higher yield by minimizing the process queue and maintaining wafer surface integrity in sub 20 nm device fabrication.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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