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Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques
- Authors
- Shin, Dong Soo; Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyun-Sung; Kim, Kyu-Sang; Shim, Jong-In
- Issue Date
- Mar-2015
- Publisher
- SPIE
- Keywords
- defect; InGaN; Light-emitting diode; nonradiative recombination; temperature-dependent electroluminescence
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.9363, pp.1 - 4
- Indexed
- SCOPUS
- Volume
- 9363
- Start Page
- 1
- End Page
- 4
- ISSN
- 0277-786X
- Abstract
- In InGaN/GaN blue light-emitting diodes (LEDs) widely utilized for general lighting, there exist various material issues that lead to the unwanted nonradiative recombination. In this paper, we utilize various characterization techniques to investigate the nonradiative recombination mechanisms in LED devices. With the characterization techniques such as temperature-dependent external quantum efficiency, current-voltage, and electroluminescence spectra, we show that different nonradiative recombination processes such as the Shockley-Read-Hall recombination and the defect-assisted tunneling can play roles in the LED devices. Information on the dominant nonradiative recombination obtained by these analyses can be used for further improving the quantum efficiency of the device. © 2015 SPIE.
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Related Researcher
- Shin, Dong Soo
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY (DEPARTMENT OF PHOTONICS AND NANOELECTRONICS)