Characterization of Cu-BTA organic complexes on Cu during Cu CMP and post Cu cleaning
- Authors
- Cho, Byoung jun; Park, Jin-Goo; Shima, Shohei; Hamada, Satomi
- Issue Date
- 2015
- Publisher
- Scitec Publications Ltd.
- Keywords
- Contact angle; Cu-BTA complex; Cupric & cuprous oxide; Electrochemical impedance spectroscopy
- Citation
- Solid State Phenomena, v.219, pp.205 - 208
- Indexed
- SCOPUS
- Journal Title
- Solid State Phenomena
- Volume
- 219
- Start Page
- 205
- End Page
- 208
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/20584
- DOI
- 10.4028/www.scientific.net/SSP.219.205
- ISSN
- 1012-0394
- Abstract
- Although copper have better electrical properties than aluminum such as low resistivity and high electro-migration resistivity, aluminum has been used as an interconnect material due to the difficulty in Cu dry etching. Since CMP process has been adapted to the semiconductor fabrication, Cu became the choice of materials for interconnection. However, copper CMP process introduces new defects on the surface such as slurry particle, organic residue, scratch and corrosion
- Files in This Item
-
Go to Link
- Appears in
Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.