Hydroxyl functionalization improves the surface passivation of nanostructured silicon solar cells degraded by epitaxial regrowth
- Authors
- Song, Jae-Won; Nam, Yoon-Ho; Park, Min-Joon; Shin, Sun-Mi; Wehrspohn, Ralf B.; Lee, Jung-Ho
- Issue Date
- Apr-2015
- Publisher
- Royal Society of Chemistry
- Citation
- RSC Advances, v.5, no.49, pp.39177 - 39181
- Indexed
- SCIE
SCOPUS
- Journal Title
- RSC Advances
- Volume
- 5
- Number
- 49
- Start Page
- 39177
- End Page
- 39181
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/21004
- DOI
- 10.1039/c5ra03775a
- ISSN
- 2046-2069
- Abstract
- Metal-assisted chemical etching is useful and cost-efficient for nanostructuring the surface of crystalline silicon solar cells. We have found that the nanoscale epitaxy of silicon occurs, upon subsequent annealing, at the Al2O3/Si interface amorphized by metal-assisted etching. Since this epitaxial growth penetrates into the pre-formed Al2O3 film, the bonding nature at the newly formed interfaces (by the regrown epitaxy) is deteriorated, resulting in a poor performance of Al2O3 passivation. Compared to the conventional hydrogen (H-) passivation, hydroxyl functionalization by oxygen plasma treatment was more effective as the wafer became thinner. For ultrathin (similar to 50 mm) wafers, similar to 30% depression in surface recombination velocity led to the improvement of similar to 15.6% in the short circuit current. The effectiveness of hydroxyl passivation validated by ultrathin wafers would be beneficial for further reducing the wafer cost of nanostructured silicon solar cells.
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