Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
The Saturated Radiative Recombination Rate of Importance to the Efficiency Droop in InGaN-based Light-Emitting Diodes
- Authors
- 심종인
- Issue Date
- 10-Nov-2011
- Place
- Osaka University
- Conference Name
- 7th Handai Nanoscience and Nanotechnology International Symposium
- Files in This Item
- There are no files associated with this item.
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Shim, Jong In
- ERICA 첨단융합대학 (ERICA 반도체·디스플레이공학전공)