Comparative study of the electrical characteristics of ALD-ZnO thin films using H2O and H2O2 as the oxidants
- Authors
- Lee, Woo-Jae; Bera, Susanta; Wan, Zhixin; Dai, Wei; Bae, Jong-Seong; Hong, Tae Eun; Kim, Kwang-Ho; Ahn, Ji-Hoon; Kwon, Se-Hun
- Issue Date
- Oct-2019
- Publisher
- American Ceramic Society
- Keywords
- atomic layer deposition; thin films; zinc oxide
- Citation
- Journal of the American Ceramic Society, v.102, no.10, pp.5881 - 5889
- Indexed
- SCIE
SCOPUS
- Journal Title
- Journal of the American Ceramic Society
- Volume
- 102
- Number
- 10
- Start Page
- 5881
- End Page
- 5889
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2137
- DOI
- 10.1111/jace.16429
- ISSN
- 0002-7820
- Abstract
- ZnO thin films were deposited via atomic layer deposition (ALD) using H2O and H2O2 as oxidants with substrate temperatures from 100 degrees C to 200 degrees C. The ZnO films deposited using H2O2 (H2O2-ZnO) showed lower growth rates than those deposited with H2O (H2O-ZnO) at these temperature range due to the lower vapor pressure of H2O2, which produces fewer OH- functional groups; the H2O2-ZnO films exhibited higher electrical resistivities than the H2O-ZnO films. The selection of H2O2 or H2O as oxidants was revealed to be very important for controlling the electrical properties of ALD-ZnO thin films, as it affected the film crystallinity and number of defects. Compared to H2O-ZnO, H2O2-ZnO exhibited poor crystallinity within a growth temperature range of 100-200 degrees C, while H2O2-ZnO showed a strong (002) peak intensity. Photoluminescence showed that H2O2-ZnO had more interstitial oxygen and fewer oxygen vacancies than H2O-ZnO. Finally, both kinds of ZnO thin films were prepared as transparent resistive oxide layers for CIGS solar cells and were evaluated.
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