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Degradation Mechanism of Al2O3 Passivation in Nanostructured Si Solar Cells
- Authors
- Song, Jae-Won; Jung, Jin-Young; Um, Han-Don; Li, Xiaopeng; Park, Min-Joon; Nam, Yoon-Ho; Shin, Sun-Mi; Park, Tae Joo; Wehrspohn, Ralf B.; Lee, Jung-Ho
- Issue Date
- Aug-2014
- Publisher
- John Wiley and Sons Ltd
- Keywords
- Al2O3; antireflective nanostructuring; atomic-layer-deposition; field effect passivation; Si solar cell
- Citation
- Advanced Materials Interfaces, v.1, no.5, pp 1 - 5
- Pages
- 5
- Indexed
- SCI
SCIE
SCOPUS
- Journal Title
- Advanced Materials Interfaces
- Volume
- 1
- Number
- 5
- Start Page
- 1
- End Page
- 5
- ISSN
- 2196-7350
- Abstract
- The degradation mechanism of Al2O3 passivation on nanostructured Si is resolved by separate considerations of interface state density and fixed charge density at the interface of Al2O3/Si. Using the analysis of surface potentials, it is reported for the first time that the positive interface charges seriously deteriorate the field-effect passivation of Al2O3 on a nanostructured surface.
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Related Researcher
- Park, Tae Joo
- ERICA 첨단융합대학 (ERICA 신소재·반도체공학전공)