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Ferroelectric domain wall motion in epitaxial PbTiO3 and BiFeO3 thin films
- Authors
- Kim, Woo-Hee; Yoon, Sung Min; Son, Jong Yeog
- Issue Date
- Jun-2014
- Publisher
- Elsevier BV
- Keywords
- Activation energy; Domain wall speed; Ferroelectric properties; Ferroelectric thin films; PFM
- Citation
- Materials Letters, v.124, pp.47 - 49
- Indexed
- SCIE
SCOPUS
- Journal Title
- Materials Letters
- Volume
- 124
- Start Page
- 47
- End Page
- 49
- ISSN
- 0167-577X
- Abstract
- We investigated ferroelectric domain switching dynamics of epitaxially grown PbTiO3 and BiFeO3 thin films. The epitaxial PbTiO3 and BiFeO3 thin films exhibited high ferroelectric remnant polarizations of approximately 94 and 50 μC/cm2, respectively. To comparatively evaluate the switching speeds of the two thin films, we measured switching currents as a function of time. The BiFeO 3 thin film showed slower switching behavior than the PbTiO 3 thin film. It is found that the slow domain wall motion of the BiFeO3 thin film is ascribed to having relatively higher activation energy, as compared to that of the PbTiO3 thin film. © 2014 Elsevier B.V.
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Related Researcher
- Kim, Woo Hee
- ERICA 공학대학 (DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING)