An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis
- Authors
- Geyer, Scott M.; Methaapanon, Rungthiwa; Johnson, Richard W.; Kim, Woo-Hee; Van Campen, Douglas G.; Metha, Apurva; Bent, Stacey F.
- Issue Date
- May-2014
- Publisher
- American Institute of Physics
- Citation
- Review of Scientific Instruments, v.85, no.5, pp.1 - 10
- Indexed
- SCIE
SCOPUS
- Journal Title
- Review of Scientific Instruments
- Volume
- 85
- Number
- 5
- Start Page
- 1
- End Page
- 10
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/22850
- DOI
- 10.1063/1.4876484
- ISSN
- 0034-6748
- Abstract
- The crystal structure of thin films grown by atomic layer deposition (ALD) will determine important performance properties such as conductivity, breakdown voltage, and catalytic activity. We report the design of an atomic layer deposition chamber for in situ x-ray analysis that can be used to monitor changes to the crystal structural during ALD. The application of the chamber is demonstrated for Pt ALD on amorphous SiO2 and SrTiO3 (001) using synchrotron-based high resolution x-ray diffraction, grazing incidence x-ray diffraction, and grazing incidence small angle scattering.
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Collections - COLLEGE OF ENGINEERING SCIENCES > DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING > 1. Journal Articles
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