Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory
DC Field | Value | Language |
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dc.contributor.author | Kim, Sung Min | - |
dc.contributor.author | Kim, Hye Ju | - |
dc.contributor.author | Jung, Hae Jun | - |
dc.contributor.author | Kim, Seong Hwan | - |
dc.contributor.author | Park, Ji-Yong | - |
dc.contributor.author | Seok, Tae Jun | - |
dc.contributor.author | Park, Tae Joo | - |
dc.contributor.author | Lee, Sang Woon | - |
dc.date.accessioned | 2021-06-22T09:42:38Z | - |
dc.date.available | 2021-06-22T09:42:38Z | - |
dc.date.created | 2021-01-21 | - |
dc.date.issued | 2019-08 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2371 | - |
dc.description.abstract | This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive bridge random access memory using two-dimensional electron gas (2DEG) at the interface of an Al2O3/TiO2 thin-film heterostructure via atomic layer deposition (ALD). The cell is composed of Cu/Ti/Al2O3/TiO2, where Cu/Ti and Al2O3 overlayers are used as the active/buffer metals and solid electrolyte, respectively, and the 2DEG at the interface of Al2O3/TiO2 heterostructure, grown by the ALD process, is adopted as a bottom electrode. The Cu/Ti/Al2O3/TiO2 device shows reliable resistive switching characteristics with excellent uniformity under a repetitive voltage sweep (direct current sweep). Furthermore, it exhibits a cycle endurance over 10(7) cycles under short pulse switching. Remarkably, a reliable operation of multilevel data writing is realized up to 10(7) cycles. The data retention time is longer than 10(6) s at 85 degrees C. The uniform resistance switching characteristics are achieved via the formation of small (similar to a few nm width) Cu filament with a short tunnel gap (<0.5 nm) owing to the 2DEG at the Al2O3/TiO2 interface. The performance and operation scheme of this device may be appropriate in neuromorphic applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | American Chemical Society | - |
dc.title | Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Tae Joo | - |
dc.identifier.doi | 10.1021/acsami.9b08941 | - |
dc.identifier.scopusid | 2-s2.0-85070802539 | - |
dc.identifier.wosid | 000482546000057 | - |
dc.identifier.bibliographicCitation | ACS Applied Materials and Interfaces, v.11, no.33, pp.30028 - 30036 | - |
dc.relation.isPartOf | ACS Applied Materials and Interfaces | - |
dc.citation.title | ACS Applied Materials and Interfaces | - |
dc.citation.volume | 11 | - |
dc.citation.number | 33 | - |
dc.citation.startPage | 30028 | - |
dc.citation.endPage | 30036 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTROCHEMICAL METALLIZATION MEMORY | - |
dc.subject.keywordPlus | FILAMENT | - |
dc.subject.keywordPlus | TIME | - |
dc.subject.keywordPlus | RAM | - |
dc.subject.keywordAuthor | conductive bridge random access memory | - |
dc.subject.keywordAuthor | oxide heterostructure | - |
dc.subject.keywordAuthor | two-dimensional electron gas | - |
dc.subject.keywordAuthor | atomic layer deposition | - |
dc.subject.keywordAuthor | thin film | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.9b08941 | - |
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