Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory
- Authors
- Kim, Sung Min; Kim, Hye Ju; Jung, Hae Jun; Kim, Seong Hwan; Park, Ji-Yong; Seok, Tae Jun; Park, Tae Joo; Lee, Sang Woon
- Issue Date
- Aug-2019
- Publisher
- American Chemical Society
- Keywords
- conductive bridge random access memory; oxide heterostructure; two-dimensional electron gas; atomic layer deposition; thin film
- Citation
- ACS Applied Materials and Interfaces, v.11, no.33, pp.30028 - 30036
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS Applied Materials and Interfaces
- Volume
- 11
- Number
- 33
- Start Page
- 30028
- End Page
- 30036
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/2371
- DOI
- 10.1021/acsami.9b08941
- ISSN
- 1944-8244
- Abstract
- This research demonstrates, for the first time, the development of highly uniform resistive switching devices with self-compliance current for conductive bridge random access memory using two-dimensional electron gas (2DEG) at the interface of an Al2O3/TiO2 thin-film heterostructure via atomic layer deposition (ALD). The cell is composed of Cu/Ti/Al2O3/TiO2, where Cu/Ti and Al2O3 overlayers are used as the active/buffer metals and solid electrolyte, respectively, and the 2DEG at the interface of Al2O3/TiO2 heterostructure, grown by the ALD process, is adopted as a bottom electrode. The Cu/Ti/Al2O3/TiO2 device shows reliable resistive switching characteristics with excellent uniformity under a repetitive voltage sweep (direct current sweep). Furthermore, it exhibits a cycle endurance over 10(7) cycles under short pulse switching. Remarkably, a reliable operation of multilevel data writing is realized up to 10(7) cycles. The data retention time is longer than 10(6) s at 85 degrees C. The uniform resistance switching characteristics are achieved via the formation of small (similar to a few nm width) Cu filament with a short tunnel gap (<0.5 nm) owing to the 2DEG at the Al2O3/TiO2 interface. The performance and operation scheme of this device may be appropriate in neuromorphic applications.
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