Resistive switching characteristics of Au/P-doped NiO/Au segmented nanowires synthesized by electrochemical deposition

Abstract

In this paper, we detail the synthesis and characteristics of Au/NiO/Au segmented nanowire-based resistive switching memory devices. The fabrication of the memory devices involves the step-by-step electrodeposition of Au-Ni-Au into an anodic aluminum oxide template followed by the thermal oxidation process to make NiO. The unipolar resistive change is observed in Au/NiO/Au nanowires exhibiting a set voltage of 0.6 V and a reset voltage of 1 V with a current compliance of 10 mA. Au diffused Au into NiO during the thermal oxidation lowers the resistance of NiO and the forming voltage. The change in the switching behavior from unipolar to bipolar is achieved by doping approximately 3 at. % phosphorous in the interface of NiO and a Au electrode. (C) 2014 The Japan Society of Applied Physics