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Etched multilayer mask in EUV lithography for 16 nm node and below
- Authors
- Kim, Guk-Jin; Yeung, Michael; Barouch, Eytan; Oh, Hye-Keun
- Issue Date
- Jul-2014
- Publisher
- SPIE
- Keywords
- Etched ML mask; EUVL mask; Lithography simulation
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.9256, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 9256
- Start Page
- 1
- End Page
- 7
- ISSN
- 0277-786X
- Abstract
- Etched multilayer masks in EUV lithography for 16 nm node and below are better than conventional binary masks due to their higher image intensities and image slopes. However, aerial-image simulation of etched multilayer masks requires special care in order to obtain accurate results. In this paper, we first show that the usual Hopkins method for partial coherence simulation gives very inaccurate results when off-axis illumination is used. We then discuss an enhanced Hopkins method which provides far greater accuracy. Simulation results are presented to demonstrate the importance of using the enhanced Hopkins method for EUV lithography simulation. © 2014 SPIE.
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