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A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation

Authors
Yeung, Michael S.Barouch, EytanOh, Hye-Keun
Issue Date
Apr-2014
Publisher
SPIE
Keywords
EUV mask; EUV pellicle; lithography simulation
Citation
Proceedings of SPIE - The International Society for Optical Engineering, v.9048, pp 1 - 7
Pages
7
Indexed
SCIE
SCOPUS
Journal Title
Proceedings of SPIE - The International Society for Optical Engineering
Volume
9048
Start Page
1
End Page
7
URI
https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25459
DOI
10.1117/12.2045618
ISSN
0277-786X
Abstract
To protect an EUV mask from contamination, a pellicle can be used. However, the pellicle membrane must be very thin due to EUV absorption. As a result, a pellicle support structure is needed to avoid deflection of the membrane by gravity. Previous authors have shown that such a structure would produce a non-uniform intensity distribution on the wafer. In this paper, we use simulation to re-examine the issue. The results show that, when coherent illumination is used, a pellicle support structure would have an undesirable effect on the aerial image. However, we also show that, when partially coherent illumination is used, the intensity non-uniformity caused by the pellicle support structure can be effectively smoothed out, resulting in a perfectly acceptable aerial image. © 2014 SPIE.
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY > DEPARTMENT OF APPLIED PHYSICS > 1. Journal Articles

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