A study of the effect of pellicle support structures on aerial-image quality in EUV lithography by rigorous electromagnetic simulation
- Authors
- Yeung, Michael S.; Barouch, Eytan; Oh, Hye-Keun
- Issue Date
- Apr-2014
- Publisher
- SPIE
- Keywords
- EUV mask; EUV pellicle; lithography simulation
- Citation
- Proceedings of SPIE - The International Society for Optical Engineering, v.9048, pp 1 - 7
- Pages
- 7
- Indexed
- SCIE
SCOPUS
- Journal Title
- Proceedings of SPIE - The International Society for Optical Engineering
- Volume
- 9048
- Start Page
- 1
- End Page
- 7
- URI
- https://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25459
- DOI
- 10.1117/12.2045618
- ISSN
- 0277-786X
- Abstract
- To protect an EUV mask from contamination, a pellicle can be used. However, the pellicle membrane must be very thin due to EUV absorption. As a result, a pellicle support structure is needed to avoid deflection of the membrane by gravity. Previous authors have shown that such a structure would produce a non-uniform intensity distribution on the wafer. In this paper, we use simulation to re-examine the issue. The results show that, when coherent illumination is used, a pellicle support structure would have an undesirable effect on the aerial image. However, we also show that, when partially coherent illumination is used, the intensity non-uniformity caused by the pellicle support structure can be effectively smoothed out, resulting in a perfectly acceptable aerial image. © 2014 SPIE.
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