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Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations

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dc.contributor.authorShin, Dong Soo-
dc.date.accessioned2021-06-23T01:42:52Z-
dc.date.available2021-06-23T01:42:52Z-
dc.date.created2021-01-22-
dc.date.issued2014-11-
dc.identifier.issn2162-108X-
dc.identifier.urihttps://scholarworks.bwise.kr/erica/handle/2021.sw.erica/25850-
dc.description.abstractVarious techniques that can give useful information on the nonradiative recombination mechanisms in InGaN-based light-emitting diodes are discussed. Characterization techniques range from the simple current-voltage and light-current measurements to more sophisticated temperature-dependent methods. © OSA 2014-
dc.language영어-
dc.language.isoen-
dc.publisherACP-
dc.titleAnalysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations-
dc.typeArticle-
dc.contributor.affiliatedAuthorShin, Dong Soo-
dc.identifier.scopusid2-s2.0-85091194064-
dc.identifier.bibliographicCitationAsia Communications and Photonics Conference, ACP, v.2014-November, pp.1 - 3-
dc.relation.isPartOfAsia Communications and Photonics Conference, ACP-
dc.citation.titleAsia Communications and Photonics Conference, ACP-
dc.citation.volume2014-November-
dc.citation.startPage1-
dc.citation.endPage3-
dc.type.rimsART-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscopus-
dc.subject.keywordPlusIII-V semiconductors-
dc.subject.keywordPlusPhotonics-
dc.subject.keywordPlusCharacterization techniques-
dc.subject.keywordPlusCurrent voltage-
dc.subject.keywordPlusNon-radiative recombinations-
dc.subject.keywordPlusOptical characterization-
dc.subject.keywordPlusRecombination mechanisms-
dc.subject.keywordPlusTemperature dependent-
dc.subject.keywordPlusLight emitting diodes-
dc.identifier.urlhttps://opg.optica.org/view_article.cfm?pdfKey=c40970fb-f0ab-4888-9ddaaabc340a8528_305722-
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